Metal-Oxide-Silicon Capacitor

The metal-oxide-silicon (MOS) capacitor locates in the center of the complementary metal-oxide-silicon (CMOS) technology. MOSFETs place reliance on the very high quality of the interface between SiO2, the standard gate dielectric, and silicon (Si). This tutorials provides the detailed understanding of the MOS capacitor which is helpful in understanding the MOSFETs

The easy to understand structure diagram of the MOS capacitor is shown in diagram below. The structure of the MOS capacitor is similar to a parallel plate capacitor in which the bottom electrode is replaced by a semiconductor. When Si is applied as the substrate material, the electrode at the top is referred to as the gate, is typically made of polycrystalline silicon (polysilicon). In addition to this the dielectric is thermally grown silicon dioxide. In MOS context, the substrate is normally known as the body